In stock: 55370
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Standard Packaging Integrated Circuit Components MTW32N20E
Vgs(th) (Max) @ Id | 4V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-247 |
Series | - |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 16A, 10V |
Power Dissipation (Max) | 180W (Tc) |
Packaging | Tube |
Package / Case | TO-247-3 |
Other Names | MTW32N20EOS |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Input Capacitance (Ciss) (Max) @ Vds | 5000pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 200V |
Detailed Description | N-Channel 200V 32A (Tc) 180W (Tc) Through Hole TO-247 |
Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |