Label and body marking of FQP10N20C can be provided after order.
In stock: 59398
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Standard Packaging Integrated Circuit Components FQP10N20C
Voltage - Test | 510pF @ 25V |
---|---|
Voltage - Breakdown | TO-220-3 |
Vgs(th) (Max) @ Id | 360 mOhm @ 4.75A, 10V |
Vgs (Max) | 10V |
Technology | MOSFET (Metal Oxide) |
Series | QFET® |
RoHS Status | Tube |
Rds On (Max) @ Id, Vgs | 9.5A (Tc) |
Polarization | TO-220-3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 6 Weeks |
Manufacturer Part Number | FQP10N20C |
Input Capacitance (Ciss) (Max) @ Vds | 26nC @ 10V |
IGBT Type | ±30V |
Gate Charge (Qg) (Max) @ Vgs | 4V @ 250µA |
FET Feature | N-Channel |
Expanded Description | N-Channel 200V 9.5A (Tc) 72W (Tc) Through Hole TO-220-3 |
Drain to Source Voltage (Vdss) | - |
Description | MOSFET N-CH 200V 9.5A TO-220 |
Current - Continuous Drain (Id) @ 25°C | 200V |
Capacitance Ratio | 72W (Tc) |