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Standard Packaging Integrated Circuit Components FQI4N80TU
Vgs(th) (Max) @ Id | 5V @ 250µA |
---|---|
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | I2PAK (TO-262) |
Series | QFET® |
Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 1.95A, 10V |
Power Dissipation (Max) | 3.13W (Ta), 130W (Tc) |
Packaging | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 800V |
Detailed Description | N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Through Hole I2PAK (TO-262) |
Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |