Label and body marking of SCTWA50N120 can be provided after order.
In stock: 51207
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Standard Packaging Integrated Circuit Components SCTWA50N120
Vgs(th) (Max) @ Id | 3V @ 1mA |
---|---|
Vgs (Max) | +25V, -10V |
Technology | SiCFET (Silicon Carbide) |
Supplier Device Package | HiP247™ |
Series | - |
Rds On (Max) @ Id, Vgs | 69 mOhm @ 40A, 20V |
Power Dissipation (Max) | 318W (Tc) |
Package / Case | TO-247-3 |
Operating Temperature | -55°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 400V |
Gate Charge (Qg) (Max) @ Vgs | 122nC @ 20V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Drain to Source Voltage (Vdss) | 1200V |
Detailed Description | N-Channel 1200V 65A (Tc) 318W (Tc) Through Hole HiP247™ |
Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |