Label and body marking of S34MS04G200BHA003 can be provided after order.
In stock: 57924
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Standard Packaging Integrated Circuit Components S34MS04G200BHA003
Write Cycle Time - Word, Page | 45ns |
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Voltage - Supply | 1.7 V ~ 1.95 V |
Technology | FLASH - NAND |
Series | Automotive, AEC-Q100, MS-2 |
Operating Temperature | -40°C ~ 85°C (TA) |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Memory Type | Non-Volatile |
Memory Size | 4Gb (512M x 8) |
Memory Interface | Parallel |
Memory Format | FLASH |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 45ns |
Access Time | 45ns |