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Standard Packaging Integrated Circuit Components SI3460BDV-T1-GE3
Voltage - Test | 860pF @ 10V |
---|---|
Voltage - Breakdown | 6-TSOP |
Vgs(th) (Max) @ Id | 27 mOhm @ 5.1A, 4.5V |
Technology | MOSFET (Metal Oxide) |
Series | TrenchFET® |
RoHS Status | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 8A (Tc) |
Polarization | SOT-23-6 Thin, TSOT-23-6 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 15 Weeks |
Manufacturer Part Number | SI3460BDV-T1-GE3 |
Input Capacitance (Ciss) (Max) @ Vds | 24nC @ 8V |
Gate Charge (Qg) (Max) @ Vgs | 1V @ 250µA |
FET Feature | N-Channel |
Expanded Description | N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP |
Drain to Source Voltage (Vdss) | - |
Description | MOSFET N-CH 20V 8A 6-TSOP |
Current - Continuous Drain (Id) @ 25°C | 20V |
Capacitance Ratio | 2W (Ta), 3.5W (Tc) |