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Standard Packaging Integrated Circuit Components SIHB12N65E-GE3
Voltage - Test | 1224pF @ 100V |
---|---|
Voltage - Breakdown | D²PAK (TO-263) |
Vgs(th) (Max) @ Id | 380 mOhm @ 6A, 10V |
Technology | MOSFET (Metal Oxide) |
Series | - |
RoHS Status | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 12A (Tc) |
Polarization | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 19 Weeks |
Manufacturer Part Number | SIHB12N65E-GE3 |
Input Capacitance (Ciss) (Max) @ Vds | 70nC @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 4V @ 250µA |
FET Feature | N-Channel |
Expanded Description | N-Channel 650V 12A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263) |
Drain to Source Voltage (Vdss) | - |
Description | MOSFET N-CH 650V 12A D2PAK |
Current - Continuous Drain (Id) @ 25°C | 650V |
Capacitance Ratio | 156W (Tc) |