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Standard Packaging Integrated Circuit Components FQB8P10TM
Vgs(th) (Max) @ Id | 4V @ 250µA |
---|---|
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | D²PAK (TO-263AB) |
Series | QFET® |
Rds On (Max) @ Id, Vgs | 530 mOhm @ 4A, 10V |
Power Dissipation (Max) | 3.75W (Ta), 65W (Tc) |
Packaging | Cut Tape (CT) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Other Names | FQB8P10TMCT |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 12 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 100V |
Detailed Description | P-Channel 100V 8A (Tc) 3.75W (Ta), 65W (Tc) Surface Mount D²PAK (TO-263AB) |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |