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Standard Packaging Integrated Circuit Components EPC2110ENGRT
Vgs(th) (Max) @ Id | 2.5V @ 700µA |
---|---|
Supplier Device Package | Die |
Series | eGaN® |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 4A, 5V |
Power - Max | - |
Packaging | Tape & Reel (TR) |
Package / Case | Die |
Other Names | 917-EPC2110ENGRTR EPC2110ENGR |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 16 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V |
Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V |
FET Type | 2 N-Channel (Dual) Common Source |
FET Feature | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 120V |
Detailed Description | Mosfet Array 2 N-Channel (Dual) Common Source 120V 3.4A Surface Mount Die |
Current - Continuous Drain (Id) @ 25°C | 3.4A |