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Standard Packaging Integrated Circuit Components SI7852DP-T1-E3
Vgs(th) (Max) @ Id | 2V @ 250µA (Min) |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PowerPAK® SO-8 |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 16.5 mOhm @ 10A, 10V |
Power Dissipation (Max) | 1.9W (Ta) |
Packaging | Tape & Reel (TR) |
Package / Case | PowerPAK® SO-8 |
Other Names | SI7852DP-T1-E3TR SI7852DPT1E3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Drain to Source Voltage (Vdss) | 80V |
Detailed Description | N-Channel 80V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8 |
Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta) |