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Standard Packaging Integrated Circuit Components GP1M009A090N
Vgs(th) (Max) @ Id | 4V @ 250µA |
---|---|
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-3PN |
Series | - |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 4.75A, 10V |
Power Dissipation (Max) | 312W (Tc) |
Packaging | Tube |
Package / Case | TO-3P-3, SC-65-3 |
Other Names | 1560-1174-1 1560-1174-1-ND 1560-1174-5 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 2324pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 900V |
Detailed Description | N-Channel 900V 9.5A (Tc) 312W (Tc) Through Hole TO-3PN |
Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |