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Standard Packaging Integrated Circuit Components SIHU2N80E-GE3
Vgs(th) (Max) @ Id | 4V @ 250µA |
---|---|
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | IPAK (TO-251) |
Series | E |
Rds On (Max) @ Id, Vgs | 2.75 Ohm @ 1A, 10V |
Power Dissipation (Max) | 62.5W (Tc) |
Packaging | Tube |
Package / Case | TO-251-3 Long Leads, IPak, TO-251AB |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 315pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 19.6nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 800V |
Detailed Description | N-Channel 800V 2.8A (Tc) 62.5W (Tc) Through Hole IPAK (TO-251) |
Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |