Label and body marking of DRA2123Y0L can be provided after order.
In stock: 52181
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Standard Packaging Integrated Circuit Components DRA2123Y0L
Voltage - Collector Emitter Breakdown (Max) | 50V |
---|---|
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Transistor Type | PNP - Pre-Biased |
Supplier Device Package | Mini3-G3-B |
Series | - |
Resistor - Emitter Base (R2) | 10 kOhms |
Resistor - Base (R1) | 2.2 kOhms |
Power - Max | 200mW |
Packaging | Tape & Reel (TR) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Other Names | DRA2123Y0L-ND DRA2123Y0LTR |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 11 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200mW Surface Mount Mini3-G3-B |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |
Base Part Number | DRA2123 |