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Standard Packaging Integrated Circuit Components IPU135N08N3 G
Vgs(th) (Max) @ Id | 3.5V @ 33µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO251-3 |
Series | OptiMOS™ |
Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 50A, 10V |
Power Dissipation (Max) | 79W (Tc) |
Packaging | Tube |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Other Names | IPU135N08N3 G-ND IPU135N08N3G IPU135N08N3GBKMA1 SP000521642 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1730pF @ 40V |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Drain to Source Voltage (Vdss) | 80V |
Detailed Description | N-Channel 80V 50A (Tc) 79W (Tc) Through Hole PG-TO251-3 |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |