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Standard Packaging Integrated Circuit Components IPAN65R650CEXKSA1
Vgs(th) (Max) @ Id | 3.5V @ 210µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO220 Full Pack |
Series | CoolMOS™ |
Rds On (Max) @ Id, Vgs | 650 mOhm @ 2.1A, 10V |
Power Dissipation (Max) | 28W (Tc) |
Packaging | Tube |
Package / Case | TO-220-3 Full Pack |
Other Names | SP001508828 |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
FET Type | N-Channel |
FET Feature | Super Junction |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 650V |
Detailed Description | N-Channel 650V 10.1A (Tc) 28W (Tc) Through Hole PG-TO220 Full Pack |
Current - Continuous Drain (Id) @ 25°C | 10.1A (Tc) |