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Standard Packaging Integrated Circuit Components TPN1R603PL,L1Q
Vgs(th) (Max) @ Id | 10V @ 10µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 8-TSON Advance (3.3x3.3) |
Series | U-MOSIX-H |
Rds On (Max) @ Id, Vgs | 1.2 mOhm @ 80A, 10V |
Power Dissipation (Max) | 104W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | 8-PowerVDFN |
Other Names | TPN1R603PL,L1Q(M TPN1R603PLL1Q TPN1R603PLL1QTR |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 30V |
Detailed Description | N-Channel 30V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |