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Standard Packaging Integrated Circuit Components IPP26CNE8N G
Vgs(th) (Max) @ Id | 4V @ 39µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO-220-3 |
Series | OptiMOS™ |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 35A, 10V |
Power Dissipation (Max) | 71W (Tc) |
Packaging | Tube |
Package / Case | TO-220-3 |
Other Names | IPP26CNE8N G-ND IPP26CNE8NG IPP26CNE8NGX IPP26CNE8NGXK SP000096472 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 2070pF @ 40V |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 85V |
Detailed Description | N-Channel 85V 35A (Tc) 71W (Tc) Through Hole PG-TO-220-3 |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |