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Standard Packaging Integrated Circuit Components RW1A013ZPT2R
Vgs(th) (Max) @ Id | 1V @ 1mA |
---|---|
Vgs (Max) | ±10V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 6-WEMT |
Series | - |
Rds On (Max) @ Id, Vgs | 260 mOhm @ 1.3A, 4.5V |
Power Dissipation (Max) | 400mW (Ta) |
Packaging | Cut Tape (CT) |
Package / Case | SOT-563, SOT-666 |
Other Names | RW1A013ZPT2RCT |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 6V |
Gate Charge (Qg) (Max) @ Vgs | 2.4nC @ 4.5V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Drain to Source Voltage (Vdss) | 12V |
Detailed Description | P-Channel 12V 1.5A (Ta) 400mW (Ta) Surface Mount 6-WEMT |
Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |