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In stock: 50656
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Standard Packaging Integrated Circuit Components SI8819EDB-T2-E1
Vgs(th) (Max) @ Id | 900mV @ 250µA |
---|---|
Vgs (Max) | ±8V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 4-MICRO FOOT® (0.8x0.8) |
Series | - |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 1.5A, 3.7V |
Power Dissipation (Max) | 900mW (Ta) |
Package / Case | 4-XFBGA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 6V |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 8V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 3.7V |
Drain to Source Voltage (Vdss) | 12V |
Detailed Description | P-Channel 12V 2.9A (Ta) 900mW (Ta) Surface Mount 4-MICRO FOOT® (0.8x0.8) |
Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |