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Standard Packaging Integrated Circuit Components STD11NM60N-1
Vgs(th) (Max) @ Id | 4V @ 250µA |
---|---|
Vgs (Max) | ±25V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | I-PAK |
Series | MDmesh™ II |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 5A, 10V |
Power Dissipation (Max) | 90W (Tc) |
Packaging | Tube |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Other Names | 497-5963-5 |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V |
Detailed Description | N-Channel 600V 10A (Tc) 90W (Tc) Through Hole I-PAK |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |