Label and body marking of TK55D10J1(Q) can be provided after order.
In stock: 57939
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Standard Packaging Integrated Circuit Components TK55D10J1(Q)
Vgs(th) (Max) @ Id | 2.3V @ 1mA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220(W) |
Series | - |
Rds On (Max) @ Id, Vgs | 10.5 mOhm @ 27A, 10V |
Power Dissipation (Max) | 140W (Tc) |
Packaging | Tube |
Package / Case | TO-220-3 |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 5700pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 100V |
Detailed Description | N-Channel 100V 55A (Ta) 140W (Tc) Through Hole TO-220(W) |
Current - Continuous Drain (Id) @ 25°C | 55A (Ta) |