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Standard Packaging Integrated Circuit Components IRF6626
Vgs(th) (Max) @ Id | 2.35V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | DIRECTFET™ ST |
Series | HEXFET® |
Rds On (Max) @ Id, Vgs | 5.4 mOhm @ 16A, 10V |
Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | DirectFET™ Isometric ST |
Other Names | IRF6626TR SP001528826 |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Input Capacitance (Ciss) (Max) @ Vds | 2380pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 4.5V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 30V |
Detailed Description | N-Channel 30V 16A (Ta), 72A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST |
Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 72A (Tc) |