Label and body marking of NSVDTA123JM3T5G can be provided after order.
In stock: 53225
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Standard Packaging Integrated Circuit Components NSVDTA123JM3T5G
Voltage - Collector Emitter Breakdown (Max) | 50V |
---|---|
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Transistor Type | PNP - Pre-Biased |
Supplier Device Package | SOT-723 |
Series | Automotive, AEC-Q101 |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 2.2 kOhms |
Power - Max | 260mW |
Package / Case | SOT-723 |
Mounting Type | Surface Mount |
Manufacturer Standard Lead Time | 4 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 260mW Surface Mount SOT-723 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |