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Standard Packaging Integrated Circuit Components LSIC1MO120E0160
Vgs(th) (Max) @ Id | 4V @ 5mA |
---|---|
Vgs (Max) | +22V, -6V |
Technology | SiCFET (Silicon Carbide) |
Supplier Device Package | TO-247-3 |
Series | - |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 10A, 20V |
Power Dissipation (Max) | 125W (Tc) |
Packaging | Tube |
Package / Case | TO-247-3 |
Other Names | F11005 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 29 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 800V |
Gate Charge (Qg) (Max) @ Vgs | 57nC @ 20V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Drain to Source Voltage (Vdss) | 1200V |
Detailed Description | N-Channel 1200V 22A (Tc) 125W (Tc) Through Hole TO-247-3 |
Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |