Label and body marking of MT29RZ4B2DZZHGSK-18 W.80E TR can be provided after order.
In stock: 58836
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Standard Packaging Integrated Circuit Components MT29RZ4B2DZZHGSK-18 W.80E TR
Write Cycle Time - Word, Page | - |
---|---|
Voltage - Supply | 1.8V |
Technology | FLASH - NAND, DRAM - LPDDR2 |
Series | - |
Packaging | Tape & Reel (TR) |
Other Names | MT29RZ4B2DZZHGSK-18 W.80E TR-ND MT29RZ4B2DZZHGSK-18W.80ETR |
Operating Temperature | -25°C ~ 85°C (TA) |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Memory Type | Non-Volatile |
Memory Size | 4Gb (512M x 8)(NAND), 2G (64M x 32)(LPDDR2) |
Memory Interface | Parallel |
Memory Format | FLASH, RAM |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | FLASH - NAND, DRAM - LPDDR2 Memory IC 4Gb (512M x 8)(NAND), 2G (64M x 32)(LPDDR2) Parallel 533MHz |
Clock Frequency | 533MHz |