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Standard Packaging Integrated Circuit Components IPD096N08N3GBTMA1
Vgs(th) (Max) @ Id | 3.5V @ 46µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO252-3 |
Series | OptiMOS™ |
Rds On (Max) @ Id, Vgs | 9.6 mOhm @ 46A, 10V |
Power Dissipation (Max) | 100W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Other Names | IPD096N08N3 G IPD096N08N3 G-ND IPD096N08N3GBTMA1TR SP000474196 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 2410pF @ 40V |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Drain to Source Voltage (Vdss) | 80V |
Detailed Description | N-Channel 80V 73A (Tc) 100W (Tc) Surface Mount PG-TO252-3 |
Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |