Label and body marking of BDV65B can be provided after order.
In stock: 54461
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Standard Packaging Integrated Circuit Components BDV65B
Voltage - Collector Emitter Breakdown (Max) | 100V |
---|---|
Vce Saturation (Max) @ Ib, Ic | - |
Transistor Type | NPN |
Supplier Device Package | TO-218 |
Series | - |
Power - Max | 125W |
Packaging | Bulk |
Package / Case | TO-218-3 |
Other Names | BDV65BCS |
Operating Temperature | - |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Frequency - Transition | 60MHz |
Detailed Description | Bipolar (BJT) Transistor NPN 100V 12A 60MHz 125W Through Hole TO-218 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V |
Current - Collector Cutoff (Max) | - |
Current - Collector (Ic) (Max) | 12A |