Label and body marking of SI2305DS-T1-E3 can be provided after order.
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Standard Packaging Integrated Circuit Components SI2305DS-T1-E3
Vgs(th) (Max) @ Id | 800mV @ 250µA |
---|---|
Vgs (Max) | ±8V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | SOT-23-3 (TO-236) |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 3.5A, 4.5V |
Power Dissipation (Max) | 1.25W (Ta) |
Packaging | Cut Tape (CT) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Other Names | SI2305DS-T1-E3CT |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1245pF @ 4V |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Drain to Source Voltage (Vdss) | 8V |
Detailed Description | P-Channel 8V 3.5A (Ta) 1.25W (Ta) Surface Mount SOT-23-3 (TO-236) |
Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |