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Standard Packaging Integrated Circuit Components IRF3515L
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
---|---|
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-262 |
Series | HEXFET® |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 25A, 10V |
Power Dissipation (Max) | 200W (Tc) |
Packaging | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Other Names | *IRF3515L |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 107nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 150V |
Detailed Description | N-Channel 150V 41A (Tc) 200W (Tc) Through Hole TO-262 |
Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |