Label and body marking of JAN2N5014S can be provided after order.
In stock: 56330
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Standard Packaging Integrated Circuit Components JAN2N5014S
Voltage - Collector Emitter Breakdown (Max) | 900V |
---|---|
Transistor Type | NPN |
Supplier Device Package | TO-39 (TO-205AD) |
Series | Military, MIL-PRF-19500/727 |
RoHS Status | RoHS non-compliant |
Power - Max | 1W |
Package / Case | TO-205AD, TO-39-3 Metal Can |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Frequency - Transition | - |
Detailed Description | Bipolar (BJT) Transistor NPN 900V 200mA 1W Through Hole TO-39 (TO-205AD) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 10V |
Current - Collector Cutoff (Max) | 10nA (ICBO) |
Current - Collector (Ic) (Max) | 200mA |