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Standard Packaging Integrated Circuit Components SPD18P06PGBTMA1
Vgs(th) (Max) @ Id | 4V @ 1mA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO252-3 |
Series | SIPMOS® |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 13.2A, 10V |
Power Dissipation (Max) | 80W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Other Names | SP000443926 SPD18P06P G SPD18P06P G-ND SPD18P06P GTR-ND SPD18P06PG SPD18P06PGBTMA1TR |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 60V |
Detailed Description | P-Channel 60V 18.6A (Tc) 80W (Tc) Surface Mount PG-TO252-3 |
Current - Continuous Drain (Id) @ 25°C | 18.6A (Tc) |