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Standard Packaging Integrated Circuit Components IRF6708S2TRPBF
Vgs(th) (Max) @ Id | 2.35V @ 25µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | DIRECTFET S1 |
Series | HEXFET® |
Rds On (Max) @ Id, Vgs | 8.9 mOhm @ 13A, 10V |
Power Dissipation (Max) | 2.5W (Ta), 20W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | DirectFET™ Isometric S1 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 30V |
Detailed Description | N-Channel 30V 13A (Tc) 2.5W (Ta), 20W (Tc) Surface Mount DIRECTFET S1 |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |