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Standard Packaging Integrated Circuit Components IRF7779L2TR1PBF
Vgs(th) (Max) @ Id | 5V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | DIRECTFET L8 |
Series | HEXFET® |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 40A, 10V |
Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | DirectFET™ Isometric L8 |
Other Names | IRF7779L2TR1PBFTR SP001575282 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 6660pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 150V |
Detailed Description | N-Channel 150V 375A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DIRECTFET L8 |
Current - Continuous Drain (Id) @ 25°C | 375A (Tc) |