Label and body marking of SI3493DDV-T1-GE3 can be provided after order.
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Standard Packaging Integrated Circuit Components SI3493DDV-T1-GE3
Vgs(th) (Max) @ Id | 1V @ 250µA |
---|---|
Vgs (Max) | ±8V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 6-TSOP |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 7.5A, 4.5V |
Power Dissipation (Max) | 3.6W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Other Names | SI3493DDV-T1-GE3TR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1825pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Detailed Description | P-Channel 20V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |