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Standard Packaging Integrated Circuit Components IPS65R650CEAKMA1
Vgs(th) (Max) @ Id | 3.5V @ 210µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO251-3 |
Series | - |
Rds On (Max) @ Id, Vgs | 650 mOhm @ 2.1A, 10V |
Power Dissipation (Max) | 86W (Tc) |
Packaging | Tube |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Other Names | SP001422888 |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 700V |
Detailed Description | N-Channel 700V 10.1A (Tc) 86W (Tc) Through Hole PG-TO251-3 |
Current - Continuous Drain (Id) @ 25°C | 10.1A (Tc) |