Label and body marking of IXFJ40N30 can be provided after order.
In stock: 53307
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Standard Packaging Integrated Circuit Components IXFJ40N30
Vgs(th) (Max) @ Id | 4V @ 4mA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-268 |
Series | HiPerFET™ |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 20A, 10V |
Power Dissipation (Max) | 300W (Tc) |
Packaging | Tube |
Package / Case | TO-220-3, Short Tab |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 4800pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 300V |
Detailed Description | N-Channel 300V 40A (Tc) 300W (Tc) Through Hole TO-268 |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |