Label and body marking of SI2372DS-T1-GE3 can be provided after order.
In stock: 57635
We are stocking distributor of SI2372DS-T1-GE3 with very competitive price. Check out SI2372DS-T1-GE3 newest pirce, inventory and lead time now by using the quick RFQ Form. Our commitment to quality and authenticity of SI2372DS-T1-GE3 is unwavering, and we have implemented stringent quality inspection and delivery processes to ensure the integrity of SI2372DS-T1-GE3. You can also find SI2372DS-T1-GE3 Datasheet here.
Standard Packaging Integrated Circuit Components SI2372DS-T1-GE3
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | SOT-23-3 (TO-236) |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 33 mOhm @ 3A, 10V |
Power Dissipation (Max) | 960mW (Ta), 1.7W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Other Names | SI2372DS-T1-GE3TR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 288pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 8.9nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 30V |
Detailed Description | N-Channel 30V 4A (Ta), 5.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236) |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta), 5.3A (Tc) |