Label and body marking of MT53D256M64D4NY-046 XT ES:B can be provided after order.
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Standard Packaging Integrated Circuit Components MT53D256M64D4NY-046 XT ES:B
Write Cycle Time - Word, Page | - |
---|---|
Voltage - Supply | 1.1V |
Technology | SDRAM - Mobile LPDDR4 |
Series | - |
Other Names | MT53D256M64D4NY-046 XT ES:B-ND MT53D256M64D4NY-046 XTES:B MT53D256M64D4NY-046 XTES:B-ND MT53D256M64D4NY-046XTES:B |
Operating Temperature | -30°C ~ 105°C (TC) |
Memory Type | Volatile |
Memory Size | 16Gb (256M x 64) |
Memory Interface | - |
Memory Format | DRAM |
Lead Free Status | Lead free |
Detailed Description | SDRAM - Mobile LPDDR4 Memory IC 16Gb (256M x 64) 2133MHz |
Clock Frequency | 2133MHz |