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Standard Packaging Integrated Circuit Components SQJ200EP-T1_GE3
Vgs(th) (Max) @ Id | 2V @ 250µA |
---|---|
Supplier Device Package | PowerPAK® SO-8 Dual Asymmetric |
Series | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs | 8.8 mOhm @ 16A, 10V |
Power - Max | 27W, 48W |
Packaging | Cut Tape (CT) |
Package / Case | PowerPAK® SO-8 Dual |
Other Names | SQJ200EP-T1_GE3CT |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 975pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 20V |
Detailed Description | Mosfet Array 2 N-Channel (Dual) 20V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric |
Current - Continuous Drain (Id) @ 25°C | 20A, 60A |