Label and body marking of DMG3N60SJ3 can be provided after order.
In stock: 55762
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Standard Packaging Integrated Circuit Components DMG3N60SJ3
Vgs(th) (Max) @ Id | 4V @ 250µA |
---|---|
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-251 |
Series | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 1.5A, 10V |
Power Dissipation (Max) | 41W (Tc) |
Packaging | Tube |
Package / Case | TO-251-3, IPak, Short Leads |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Manufacturer Standard Lead Time | 22 Weeks |
Lead Free Status / RoHS Status | Contains lead / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 354pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 12.6nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 650V |
Detailed Description | N-Channel 650V 2.8A (Tc) 41W (Tc) Through Hole TO-251 |
Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |