Label and body marking of QJD1210010 can be provided after order.
In stock: 57347
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Standard Packaging Integrated Circuit Components QJD1210010
Vgs(th) (Max) @ Id | 5V @ 10mA |
---|---|
Supplier Device Package | Module |
Series | - |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 100A, 20V |
Power - Max | 1080W |
Packaging | Bulk |
Package / Case | Module |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 10200pF @ 800V |
Gate Charge (Qg) (Max) @ Vgs | 500nC @ 20V |
FET Type | 2 N-Channel (Dual) |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Detailed Description | Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 100A (Tc) 1080W Chassis Mount Module |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |