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Standard Packaging Integrated Circuit Components PHB112N06T,118
Vgs(th) (Max) @ Id | 4V @ 1mA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | D2PAK |
Series | TrenchMOS™ |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 25A, 10V |
Power Dissipation (Max) | 200W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Other Names | 934056648118 PHB112N06T /T3 PHB112N06T /T3-ND |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 4352pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 55V |
Detailed Description | N-Channel 55V 75A (Tc) 200W (Tc) Surface Mount D2PAK |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |