Label and body marking of IXFM67N10 can be provided after order.
In stock: 53131
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Standard Packaging Integrated Circuit Components IXFM67N10
Vgs(th) (Max) @ Id | 4V @ 4mA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-204AE |
Series | HiPerFET™ |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 33.5A, 10V |
Power Dissipation (Max) | 300W (Tc) |
Package / Case | TO-204AE |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 100V |
Detailed Description | N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-204AE |
Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |