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Standard Packaging Integrated Circuit Components SPP02N60C3HKSA1
Vgs(th) (Max) @ Id | 3.9V @ 80µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO220-3-1 |
Series | CoolMOS™ |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 1.1A, 10V |
Power Dissipation (Max) | 25W (Tc) |
Packaging | Tube |
Package / Case | TO-220-3 |
Other Names | SP000013523 SPP02N60C3 SPP02N60C3IN SPP02N60C3IN-ND SPP02N60C3X SPP02N60C3XK SPP02N60C3XTIN SPP02N60C3XTIN-ND |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 12.5nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 650V |
Detailed Description | N-Channel 650V 1.8A (Tc) 25W (Tc) Through Hole PG-TO220-3-1 |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |