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Standard Packaging Integrated Circuit Components MUN5212DW1T1G
Voltage - Collector Emitter Breakdown (Max) | 50V |
---|---|
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Series | - |
Resistor - Emitter Base (R2) | 22 kOhms |
Resistor - Base (R1) | 22 kOhms |
Power - Max | 250mW |
Packaging | Tape & Reel (TR) |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Other Names | MUN5212DW1T1G-ND MUN5212DW1T1GOSTR |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 40 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | - |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |
Base Part Number | MUN52**DW1T |