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Standard Packaging Integrated Circuit Components SIHFB11N50A-E3
Vgs(th) (Max) @ Id | 4V @ 250µA |
---|---|
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220AB |
Series | - |
Rds On (Max) @ Id, Vgs | 520 mOhm @ 6.6A, 10V |
Power Dissipation (Max) | 170W (Tc) |
Packaging | Tube |
Package / Case | TO-220-3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 1423pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 500V |
Detailed Description | N-Channel 500V 11A (Tc) 170W (Tc) Through Hole TO-220AB |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |