Label and body marking of 2N7000,126 can be provided after order.
In stock: 50579
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Standard Packaging Integrated Circuit Components 2N7000,126
Vgs(th) (Max) @ Id | 2V @ 1mA |
---|---|
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-92-3 |
Series | TrenchMOS™ |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
Power Dissipation (Max) | 830mW (Ta) |
Packaging | Tape & Box (TB) |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Other Names | 2N7000 AMO 2N7000 AMO-ND 934003460126 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 60V |
Detailed Description | N-Channel 60V 300mA (Tc) 830mW (Ta) Through Hole TO-92-3 |
Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) |