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Standard Packaging Integrated Circuit Components SIA419DJ-T1-GE3
Vgs(th) (Max) @ Id | 850mV @ 250µA |
---|---|
Vgs (Max) | ±5V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PowerPAK® SC-70-6 Single |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 5.9A, 4.5V |
Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | PowerPAK® SC-70-6 |
Other Names | SIA419DJ-T1-GE3TR SIA419DJT1GE3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 5V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Detailed Description | P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |