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Standard Packaging Integrated Circuit Components SI4778DY-T1-GE3
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
---|---|
Vgs (Max) | ±16V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 8-SO |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 7A, 10V |
Power Dissipation (Max) | 2.4W (Ta), 5W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Other Names | SI4778DY-T1-GE3TR SI4778DYT1GE3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 680pF @ 13V |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 25V |
Detailed Description | N-Channel 25V 8A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |