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Standard Packaging Integrated Circuit Components IXFA8N85XHV
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
---|---|
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-263HV |
Series | HiPerFET™ |
Rds On (Max) @ Id, Vgs | 850 mOhm @ 4A, 10V |
Power Dissipation (Max) | 200W (Tc) |
Packaging | Tube |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 14 Weeks |
Input Capacitance (Ciss) (Max) @ Vds | 654pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 850V |
Detailed Description | N-Channel 850V 8A (Tc) 200W (Tc) Surface Mount TO-263HV |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |